? 2003 ixys all rights reserved to-247ad (ixgh) g c e g = gate c = collector e = emitter tab = collector symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c40a i c110 t c = 110 c20a i cm t c = 25 c, 1 ms 100 a ssoa v ge = 15 v, t j = 125 c, r g = 10 ? i cm = 80 a (rbsoa) clamped inductive load @0.8 v ces p c t c = 25 c 190 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (to-247) 1.13/10 nm/lb.in. maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s maximum tab temperature 260 c soldering smd devices for 10s weight to-247ad/to-268 6/4 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 1 a, v ge = 0 v 1200 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = v ces t j = 25 c 150 a v ge = 0 v t j = 125 c50 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 20a , v ge = 15 v 2.9 3.4 v note 2 t j =125 c 2.8 v features z international standard packages: jedec to-247ad & to-268 z igbt and anti-parallel fred for resonant power supplies - induction heating - rice cookers z mos gate turn-on - drive simplicity z fast recovery expitaxial diode (fred) - soft recovery with low i rm advantages z saves space (two devices in one package) z easy to mount with 1 screw (isolated mounting screw hole) z reduces assembly time and cost ds98985e(07/03) to-268 (ixgt) g c (tab) e high voltage igbt with diode ixgh 20n120bd1 ixgt 20n120bd1 tab v ces = 1200 v i c25 =40a v ce(sat) = 3.4 v t fi(typ) = 160 ns preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 20n120bd1 ixgt 20n120bd1 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 to-247 ad outline 1 = gate 2 = collector 3 = emitter tab = collector symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 20a; v ce = 10 v, 12 18 s note 2. c ies 1700 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 105 pf c res 39 pf q g 72 nc q ge i c = 20a, v ge = 15 v, v ce = 0.5 v ces 12 nc q gc 27 nc t d(on) 25 ns t ri 15 ns t d(off) 150 280 ns t fi 160 320 ns e off 2.1 3.5 mj t d(on) 25 ns t ri 18 ns e on 1.9 mj t d(off) 270 ns t fi 360 ns e off 3.5 mj r thjc 0.65 k/w r thck (to-247) 0.25 k/w reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 10 a, v ge = 0 v 3.3 v i f t c = 90 c10a i rm i f = 10 a; -di f /dt = 400 a/ s, v r = 600 v 14 a t rr v ge = 0 v; t j = 125 c 120 ns t rr i f = 1 a; -di f /dt = 100 a/ s; v r = 30 v, v ge = 0 v 40 n s r thjc 2.5 k/w inductive load, t j = 125 c i c = 20a; v ge = 15 v v ce = 0.8 v ces ; r g = r off = 10 ? note 1 inductive load, t j = 25 c i c = 20 a; v ge = 15 v v ce = 0.8 v ces ; r g = r off = 10 ? note 1. to-268 outline notes: 1. switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g . 2. pulse test, t 300 s, duty cycle d 2 % dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161
? 2003 ixys all rights reserved fig. 2. extended output characteristics @ 25 deg. c 0 20 40 60 80 10 0 12 0 14 0 16 0 02 46 81012141618 v ce - volts i c - amperes v g e = 1 5v 9v 1 1v 7v 5v 13 v fig. 3. output characteristics @ 125 deg. c 0 5 10 15 20 25 30 35 40 0.511.522.533.544.55 v ce - volts i c - amperes v g e = 1 5v 1 3v 1 1 v 5v 7v 9v fig. 1. output characteristics @ 25 deg. c 0 5 10 15 20 25 30 35 40 1 1.5 2 2.5 3 3.5 4 4.5 5 v ce - volts i c - amperes v g e = 1 5v 1 3v 1 1 v 5v 7v 9v fig. 5. input admittance 0 10 20 30 40 50 60 70 80 345678910 v ge - volts i c - amperes t j = -40oc 25oc 1 25oc fig. 6. transconductance 0 3 6 9 12 15 18 21 24 27 0 10 20304050607080 i c - amperes g f s - siemens t j = -40oc 25oc 1 25oc fig. 4. temperature dependence of v ce(sat) 0.7 0.8 0.9 1 1. 1 1. 2 1. 3 1. 4 -50 -25 0 25 50 75 100 125 150 t j - degr ees centigr ade v ce (sat) - normalize d i c = 40a i c = 20a i c = 1 0a v g e = 1 5v ixgh 20n120bd1 ixgt 20n120bd1
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 20n120bd1 ixgt 20n120bd1 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 fig. 10. gate charge 0 3 6 9 12 15 0 10 2030 4050607080 q g - nanocoulombs v g e - volts v c e = 600v i c = 20a i g = 1 0ma fig. 7. dependence of e off on r g 0 2 4 6 8 10 12 14 0 102030405060 r g - ohms e off - millijoules i c = 1 0a i c = 20a i c = 40a t j = 1 25oc v g e = 1 5v v c e = 960v fig. 8. dependence of e off on i c 2 4 6 8 10 12 14 10 15 20 25 30 35 40 i c - amperes e off - millijoules r g = 5 ohms r g = 56 ohms t j = 1 25oc v g e = 1 5v v c e = 960v fig. 9. dependence of e off on t emperature 0 2 4 6 8 10 12 14 16 0 255075100125150 t j - degrees centigrade e off - millijoules i c = 40a i c = 20a i c = 1 0a v g e = 1 5v v c e = 960v so lid lines - r g = 56 ohms dashed lines - r g = 5 ohms fig. 11. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 100 300 500 700 900 1100 1300 v ce - volts i c - amperes t j = 125 o c r g = 10 ohms dv/dt < 10v/ns fig. 12. maximum transient thermal resistance 0.1 1 1101001000 puls e width - millis ec onds r (th) j c - (oc/w)
? 2003 ixys all rights reserved 200 600 1000 0 400 800 120 140 160 180 200 220 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 40 80 120 0.0 0.4 0.8 1.2 v fr di f /dt v 200 600 1000 0 400 800 0 10 20 30 40 50 60 100 1000 0 1 2 3 4 5 01234 0 10 20 30 40 50 60 70 i rm q r i f a v f -di f /dt -di f /dt a/ s a v c a/ s a/ s t rr ns t fr z thjc a/ s s dsep 30-12a/dsec 60-12a i f = 60a i f = 30a i f = 15a t vj = 100c v r = 600v t vj = 100c i f = 30a fig. 15. peak reverse current i rm versus -di f /dt fig. 14. reverse recovery charge q r versus -di f /dt fig. 13. forward current i f versus v f t vj = 100c v r = 600v t vj = 100c v r = 600v i f = 60a i f = 30a i f = 15a q r i rm fig. 16. dynamic parameters q r , i rm versus t vj fig. 17. recovery time t rr versus -di f /dt fig. 18. peak forward voltage v fr and t fr versus di f /dt i f = 60a i f = 30a i f = 15a t fr v fr fig. 19. transient thermal resistance junction to case t vj =150c t vj =100c t vj = 25c constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.465 0.0052 2 0.179 0.0003 3 0.256 0.0397 ixgh 20n120bd1 ixgt 20n120bd1
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